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grinding tantalum is difficult, especially so for annealed tantalum.
تانتال (tantalum) از عنصرهای شیمیایی جدول تناوبی است.
Última actualización: 2016-03-03
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soi substrate fabrication. the soi wafers used for this process were custom fabricated. the device wafers, which were boron doped with a bulk resistivity of 0.1 - 0.5 Ω-cm, were first implanted to create a highly doped region of boron at the bonding surface. a micron of oxide was then grown on both the device and handle wafers. they were fusion bonded and annealed at 1100°c in a steam environment. the device layer was then ground and polished to final thickness of 50 µm
Última actualización: 2021-06-05
Frecuencia de uso: 1
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