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complementary metal oxide semiconductor
相補型金属酸化膜半導体
Son Güncelleme: 2006-09-06
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renesas has been using monos technology in eeprom products for over 20 years and has a sales track record of sales of over 2 billion eeprom devices.to achieve even higher speeds, in 2004 renesas adopted the monos (metal oxide nitride oxide silicon) technology for flash mcu products. in the monos technology, the transistor gate insulation film is formed as a lamellar structure of oxide and nitride films, and data (charge) is accumulated in the trap levels in the nitride film. renesas has been using monos technology in eeprom products for over 20 years and has a sales track record of sales of over 2 billion eeprom devices.
ルネサスはmonos技術をeeprom製品に20年以上適用しており、20億個を超えるeepromの販売実績があります。ルネサスは、さらなる高速化を目指しmonos(metal oxide nitride oxide silicon) 技術のフラッシュメモリを2004年にフラッシュマイコンに導入しました。monos技術では、 トランジスタのゲート絶縁膜に酸化膜と窒化膜の積層構造を形成し、窒化膜中のトラップ準位にデータ(電荷)を貯えます。 ルネサスはmonos技術をeeprom製品に20年以上適用しており、20億個を超えるeepromの販売実績があります。
Son Güncelleme: 2011-03-24
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