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the ground plane is considered to be maintained at a fixed potential, exemplarily ground potential.
october 1996

in view of the extensive use of microprocessors in the field of automated investigation of slide samples, as evinced exemplarily by u.s. patent nos.
in view of the extensive use of microprocessors in the field of automated investigation of slide samples, as evinced exemplarily by u.s. pat.

in the visual inspection of samples exemplarily taken from the tissues or body fluids of a patient, it is customary to place a slide containing a sample in a slide carrier on a microscope stage and to manually shift the carrier so that the slide executes a meandering path below the lens system of the microscope.
more particularly, this invention relates to a method and apparatus usable with an optical microscope for visually detecting the presence of a microscopic object in a sample and determining the position of the object in the sample to enable repeated visual observation of the object. in the visual inspection of samples exemplarily taken from the tissues or body fluids of a patient, it is customary to place a slide containing a sample in a slide carrier on a microscope stage and to manually shift the carrier so that the slide executes a meandering path below the lens system of the microscope.

then the horizontal variation of φ (x) is found to obey the equation: d2φ (x)dx2 - φ (x)λ2soi = 0 it is in this respect that the natural length scale λ emerges. we have found that in order for an soi device having an effective channel length leff to operate substantially free of short-channel effects such as punchthrough, the ratio λsoi/l eff should be no more than about 0.1 - 0.2, although specific applications will dictate more precisely what ratio is small enough. we have applied a similar theorerical analysis to a structure, the “ground plane” structure, which has different boundary conditions than the soi structure. as discussed below, we have discovered not only that the ground plane structure is at least as effective as the soi structure for reducing λ, but also that it can be practically realized in bulk silicon. the ground plane structure is depicted schematically in fig. 1. as is apparent from the figure, a gate oxide layer 10 overlies a silicon layer 20. a portion of the silicon layer overlies a buried ground plane 30. significantly (for purposes of this idealized picture), the lateral dimensions of the gate oxide, the channel region 40, and the ground plane are assumed to be identical. the ground plane is considered to be maintained at a fixed potential, exemplarily ground potential. we have found that such a structure has a natural length scale λ, analogous to λsoi, which is approximately given by: λ = εsi2εox tsitox1 + εsitoxεoxt si
standards – st.32 page: 3.32.102