Results for organic field effect transistor translation from English to Russian

junction field effect transistors jfet
полевой транзистор с p-n переходом

each storage location of an eprom consists of a single field-effect transistor.
Каждый бит памяти eprom состоит из одного полевого транзистора.

each field-effect transistor consists of a channel in the semiconductor body of the device.
Каждый полевой транзистор состоит из канала в полупроводниковой подложке устройства.

7, focusing on field effect at the expense of long-term use
7, сосредоточив внимание на эффект поля за счет длительного использования

designed to test the static parameters of field-effect transistors;
Предназначен для проверки статических параметров полевых транзисторов ;

organic field-effect transistors and integrated circuits can be prepared completely by means of mass-printing methods.
Органические полевые транзисторы и интегральные схемы могут быть полностью изготовлены с помощью серийных методов печати.

it is shown that the magnet field effect on water is integrated and multifactorial.
Показано, что воздействие магнитного поля на воду носит комплексный многофакторный характер.

the absence of a magnetic field effect on the strain value up to failure has been determined.
Установлено отсутствие влияния этого поля на деформацию до разрушения.

thus the energy in the lc circuit in resonance with the ion slowly oscillates between the many electrons (10000) in the gate of the field effect transistor and the single electron.
Таким образом энергия в контуре в резонансе с ионом медленно осциллирует между множественными электронами (10000) в затворе транзистора и одиночным электроном.

description of goods/services - transistor field-effect, is given under the below mentioned section of the fisinter.
Описание продукции/услуги - Транзистор полевой, представлено в указанной ниже рубрике ФИС.

enter the section and learn detailed description of the available trademarks and modifications of the goods/services - transistor field-effect.
Войдите в рубрику и ознакомьтесь с подробным описанием, имеющихся марок и модификаций продукции/услуги - Транзистор полевой.

assigned to the basic static parameters of low-power field-effect transistors to determine the proper operation and suitability for use in different equipment.
Предназначен для проверки основных статических параметров маломощных полевых транзисторов с целью определения их исправности и пригодности для использования в различной аппаратуре.

metal-insulator-semiconductor (mis) type field effect transistors are the most popular and most commonly used active components for the silicon ics.
metal-insulator-semiconductor (mis) type field effect transistors are the most popular and most commonly used active components for the silicon ics.

these field-effects create distinct flows of energy, geometry and harmonics within you.
Эти полевые эффекты создают отчётливые потоки энергии, геометрические паттерны и гармоники внутри вас.

5.1.2. mathematical assessment and phantom measurements of electric and magnetic fields effect factor on the person
5.1.2. Математическая оценка и фантомные измерения факторов воздействия на человека электрических и магнитных полей

phosphorus diffusion profiles in germanium have been calculated using different models some of which take into account the effect of multiply charged vacancies and field effects.
Проведены расчеты диффузионных профилей фосфора в германии для различных моделей, в том числе учитывающих влияние многозарядных вакансий и полевых эффектов.

the magnetic field effects on the acupuncture points can activate metabolism in tissues, increase blood flow, oxygenation and nutrition of tissues and organs.
Магнитное поле при воздействии на акупунктурные точки может активировать обмен в тканях, усиливать кровоток, оксигенацию и питание тканей и органов.

ex85371099 ex85438997 | 95 25 | unit consisting of two metal oxide semiconductor field effect transistors contained in a dual leadframe housing | 0 | 1.1.2006 to 31.12.2008 |
ex85371099 ex85438997 | 95 25 | Устройство от два метални оксидни полупроводникови транзистора, поставени в двойна рамкова кутия | 0 | 1.1.2006 г.

* "method and apparatus for forming semiconductor structures", filed august 1954, issued february 1959, assigned to philco corporation* "transistor structure and method", filed april 1957, issued march 1960, assigned to beckmann instruments* "semiconductor scanning device", filed june 1959, issued november 1960, assigned to fairchild semiconductor* "transistor structure and method of making the same", filed march 1957, issued january 1961, assigned to clevite corporation* "semiconductor switching device", filed june 1959, issued february 1961, assigned to fairchild semiconductor* "semiconductor device and lead structure", filed july 1959, issued april 1961, assigned to fairchild semiconductor* "field effect transistor", filed january 1958, issued november 1961, assigned to clevite corporation* "field controlled avalanche semiconductive device", filed february 1958, issued july 1963, assigned to clevite corporation* "method for fabricating transistors", filed june 1959, issued october 1963, assigned to fairchild camera and instrument corp.* "transistor structure controlled by an avalanche barrier", filed june 1958, issued november 1963, assigned to clevite corporation* "method of making a transistor structure" (coinventor william shockley), filed april 1957, issued july 1964, assigned to clevite corporation* "semiconductor circuit complex having isolation means", filed september 1959, issued september 1964, assigned to fairchild camera and instrument corp.* "method of forming a semiconductor", filed july 1963, issued may 1965, assigned to fairchild camera and instrument corp.* "solid state circuit with crossing leads", filed april 1961, issued august 1965, assigned to fairchild camera and instrument corp.* "trainable system", filed october 1964, issued june 1967, assigned to fairchild camera and instrument corp.==notes====citations====references==*berlin, leslie "the man behind the microchip: robert noyce and the invention of silicon valley " publisher oxford university press us, 2005 isbn 0-19-516343-5*burt, daniel s. "the chronology of american literature: america's literary achievements from the colonial era to modern times" houghton mifflin harcourt, 2004.
Нойс является автором 15 патентов:* "method and apparatus for forming semiconductor structures", февраль 1959, philco corporation* "transistor structure and method", март 1960, beckmann instruments* "semiconductor scanning device", ноябрь 1960, fairchild semiconductor* "transistor structure and method of making the same", январь 1961, clevite corporation* "semiconductor switching device", февраль 1961, fairchild semiconductor* "semiconductor device and lead structure", апрель 1961, fairchild semiconductor* "field effect transistor", ноябрь 1961, clevite corporation* "field controlled avalanche semiconductive device", июль 1963, clevite corporation* "method for fabricating transistors", октябрь 1963, fairchild camera и instrument corp.* "transistor structure controlled by an avalanche barrier", ноябрь 1963, clevite corporation* "method of making a transistor structure" (соавтор william shockley), июль 1964, clevite corporation* "semiconductor circuit complex having isolation means", сентябрь 1964, fairchild camera и instrument corp.* "method of forming a semiconductor", май 1965, fairchild camera и instrument corp.* "solid state circuit with crossing leads", август 1965, fairchild camera и instrument corp.* "trainable system", июнь 1967 fairchild camera и instrument corp.* leslie berlin_berlin, leslie "the man behind the microchip: robert noyce and the invention of silicon valley " publisher oxford university press us, 2005 isbn 0-19-516343-5* burt, daniel s. "the chronology of american literature: america’s literary achievements from the colonial era to modern times" houghton mifflin harcourt, 2004.