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la résistance de jonction réduite générée par la largeur de bande interdite réduite de silicium/germanium du transistor nmos (120, 220) permet d'obtenir un gain de performance global, dans lequel, en particulier dans des dispositifs soi partiellement appauvris, l'effet délétère des corps flottants est également réduit en raison d'une augmentation des courants de fuite générés par la couche de silicium/germanium (117, 127, 217, 227) dans les transistors pmos (110, 210) et nmos (120, 220).
due to the reduced junction resistance caused by the reduced band gap of silicon/germanium in the nmos transistor (120, 220), an overall performance gain is accomplished, wherein, particularly in partially depleted soi devices, the deleterious floating body effect is also reduced, due to the increased leakage currents generated by the silicon/germanium layer (117, 127, 217, 227) in the pmos (110, 210) and nmos transistor (120, 220).
Last Update: 2014-12-03
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