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as schematically illustrated in fig.
as schematically illustrated in fig.

3 under the action of a spring, schematically shown at 69 in fig.
3 under the action of a spring, schematically shown at 69 in fig.

3); it is urged to this position by a spring schematically shown in 36.
3); it is urged to this position by a spring schematically shown in 36.

control lever 14 is further connected, as schematically illustrated at 27, to a standard underspeed actuator 28.
control lever 14 is further connected, as schematically illustrated at 27, to a standard underspeed actuator 28.

table 1.1 sets out these complex interactions schematically, which are discussed below and form the context for the following chapters.
it follows previous initiatives that have paved the way for this argument.

this lower surface of slide bar 34 is slightly inclined such that the rightward movement of the slide bar causes bar 40 to move downwardly a small amount against the action of a spring, schematically shown at 42.
this lower surface of slide bar 34 is slightly inclined such that the rightward movement of the slide bar causes bar 40 to move downwardly a small amount against the action of a spring, schematically shown at 42.

1 schematically illustrates a control circuit employing an interlock valve means embodiment of the present invention therewith, with portions of the control circuit and interlock valve means being broken-away for clarification purposes; fig.
1 schematically illustrates a control circuit employing an interlock valve means embodiment of the present invention therewith, with portions of the control circuit and interlock valve means being broken-away for clarification purposes; fig.

then the horizontal variation of φ (x) is found to obey the equation: d2φ (x)dx2 - φ (x)λ2soi = 0 it is in this respect that the natural length scale λ emerges. we have found that in order for an soi device having an effective channel length leff to operate substantially free of short-channel effects such as punchthrough, the ratio λsoi/l eff should be no more than about 0.1 - 0.2, although specific applications will dictate more precisely what ratio is small enough. we have applied a similar theorerical analysis to a structure, the “ground plane” structure, which has different boundary conditions than the soi structure. as discussed below, we have discovered not only that the ground plane structure is at least as effective as the soi structure for reducing λ, but also that it can be practically realized in bulk silicon. the ground plane structure is depicted schematically in fig. 1. as is apparent from the figure, a gate oxide layer 10 overlies a silicon layer 20. a portion of the silicon layer overlies a buried ground plane 30. significantly (for purposes of this idealized picture), the lateral dimensions of the gate oxide, the channel region 40, and the ground plane are assumed to be identical. the ground plane is considered to be maintained at a fixed potential, exemplarily ground potential. we have found that such a structure has a natural length scale λ, analogous to λsoi, which is approximately given by: λ = εsi2εox tsitox1 + εsitoxεoxt si
standards – st.32 page: 3.32.102