Você procurou por: random access memory (Inglês - Chinês (simplificado))

random access memory
随机存取内存

random-access memory
随机存取存储器

random access memory card
ram 卡

random access memory cache
ram 快取

random access
隨機存取

(c) static random access memory
（c）静态随机存取存储器

4 - random (file open for random access)
4 - random (開啟檔案用於隨機存取)

this has been upheld by the wto panel on drams (dynamic random access memory semiconductors).
这得到世贸组织动态内存(动态随机存储器)案评判组的认可。

research on the ionosphere and the space environment, estimation of random access memory performance and other applications
电离层和空间环境研究、随机存取存储性能估测，以及其他用途

research into the ionosphere and the space environment, estimation of the performance of the random access memory and other applications
电离层和空间环境研究、随机存取存储器性能估测，以及其他应用

parallel computation on pram (parallel random access machine), in september;
9月,伪随机存取存储器的并行计算;

united states -- countervailing duty investigation on dynamic random access memory semiconductors (drams) from korea (ab-2005-4)
united states - countervailing duty investigation on dynamic random access memory semiconductors (drams) from korea， （ab-2005-4）

for the census project, international personnel had random access throughout the country during the field enumeration in october 2008.
在人口普查项目下，国际人员于2008年10月的实地人口普查期间在该国各地享有随机的准入。

\<emph\>datasetlength:\</emph\> for random access files, set the length of the records.
\<emph\>datasetlength：\</emph\> 對於隨機存取檔，設定條目長度。

- samsung electronics of korea, which moved from licensing technology to being a full partner in a consortium with nec of japan and at&t of the united states in the development of dynamic random access memories (drams);
南朝鲜的三星电子公司，在发展动态随机存取储存器中，它由获得技术许可证变成与日本电器公司和美国电话电报公司建成的财团中的正式伙伴；

22. isas has developed a radiation-hardened static random access memory (sram) by means of a commercial 0.2-micron silicon on insulator (soi) process, in collaboration with mitsubishi heavy industries ltd. this 128-kbit sram is single-event-latchup free and has single-event-upset threshold linear energy transfer of 45 mev/(mg/cm2).
22. 宇航研究所和三菱重工株式会社合作，利用民用的0.2微米隔离层硅片（soi）工艺研制了辐射加固静态随机存取存储器（sram）。