Results for buffer translation from Malay to English

Human contributions

From professional translators, enterprises, web pages and freely available translation repositories.

Add a translation

Malay

English

Info

Malay

salary buffer

English

buffer solution

Last Update: 2022-03-21
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

buffer fail berganda

English

multiple file buffers

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

logical buffer gatestencils

English

logical buffer gate

Last Update: 2011-10-23
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

buffer ditulis ke %s

English

buffer written to %s

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

benarkan beberapa buffer fail

English

enable multiple file buffers

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

e86: buffer %ld tidak wujud

English

e86: buffer %ld does not exist

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

tiada apa dalam buffer nyahbuat!

English

nothing in undo buffer!

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

tidak dapat memperoleh saiz buffer paip

English

could not get size of pipe buffer

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

e94: tiada padanan buffer bagi %s

English

e94: no matching buffer for %s

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

buffer tidak ditulis ke %s: %s

English

buffer not written to %s: %s

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

e87: tidak dapat melangkaui buffer terakhir

English

e87: cannot go beyond last buffer

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

toggle kegunaan buffer barutoggle milky way in the display

English

toggle constellation boundaries

Last Update: 2011-10-23
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

saiz buffer input lebih kecil daripada saiz minimum %dkb

English

input buffer size smaller than minimum size of %dkb.

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

here i attach the mrf, buffer stock for store cnz temerloh.

English

Last Update: 2020-08-18
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

arahan untuk dilaksanakan dalam buffer baru [daripada% s]

English

command execution:: before connect

Last Update: 2011-10-23
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

simpan buffer ubahsuai (jawab "tidak" akan menghilangkan perubahan) ?

English

save modified buffer (answering "no" will destroy changes) ?

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous
Warning: Contains invisible HTML formatting

Malay

--audio-buffer n guna penimbal output audio daripada 'n' kilobait

English

--audio-buffer n use an output audio buffer of 'n' kilobytes

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

e89: tiada pindaan sejak pindaan terakhir pada buffer %ld (untuk teruskan juga, tambahkan ! )

English

e89: no write since last change for buffer %ld (add ! to override)

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

jika anda memerlukan buffer kosong tambahan, jangan masukkan sebarang namafail, atau taip namafail yang tidak wujud pada prom dan tekan enter. kekunci fungsi berikut terdapat didalam mod sisipan fail:

English

if you need another blank buffer, do not enter any filename, or type in a nonexistent filename at the prompt and press enter. the following function keys are available in insert file mode:

Last Update: 2014-08-15
Usage Frequency: 1
Quality:

Reference: Anonymous

Malay

the performance of semiconductor devices depends strongly upon the materials microstructure. therefore the microstructural control to reduce the density of lattice defects is intrinsically important for fabrication of high performance devices. in this research, the microstructures have been analysed in detail and the mechanisms of microstructural changes in aln thin films have been clarified for the establishment of the growth method of aln on sapphire substrate. aln templates for overgrowth of aln thin layer were made by growing an aln buffer layer grown on a (0001) sapphire substrate by the metal organic vapor phase epitaxy (movpe) growth process in a rather conventional way, but annealing treatments were added before and after the deposition of aln buffer layer. the surface roughness of aln was observed with an atomic force microscope (afm) and xrc .the cross section of aln template was observed by using conventional transmission electron microscopy (ctem) at 200kv. high-angle annular dark-field (haadf) scanning-tem images were also observed with a scanning transmission electron microscope (stem) at 300 kv. thin foil specimens for tem observation were made using a focused ion beam (fib) mill with accelerating voltage of 15kv~3 kv. prior to the deposition of a mt-aln layer, the sapphire substrate was annealed at a high temperature tan under the atmosphere of h2. for tan<1250°c, the crystallinity improved but twisting domains appear above the temperature. threading disloactions type c, type (a + c) and twisting domains with 200 - 500 nm in diameter along [2-1-10], with 108 cm-2 dislocation density was observed. however when the temperature was increased to 1350°c the threading dislocations were reduced and enhanced the adhesion between sapphire and aln buffer layer. on the other hand, post deposition annealing at a high temperature between 1500oc to 1700oc for 2 hours under the atmosphere of n2+co was carried out. cross sectional tem has revealed that after annealing at 1500oc, cone-shaped domains and threading dislocations remained. the morphology and the diffraction condition for the image contrast strongly suggest that the domains were inversion domains. threading dislocations type-a and type-a+c dislocations were visible for g =01-10 under the two beam condition. however, after annealing at 1550oc, the inversion domains coalesced with each other to leave a single inversion domain boundary running in a zigzag laterally at the center of aln buffer layer. the upper layer has al- polarity where else the lower layer has n-polarity according to the haadf and cbed images. the inversion domain boundary become smooth and flatter with the rising annealing temperature. it can be considered that domain boundaries can be eliminated by the lateral growth and mutual coalescence of domains even if boundaries penetrate vertically up to the top surface. the surface of mt-aln buffer was finely rugged before the annealing, but became coarser and smoother with annealing. the changes in the surface morphology indicates the occurrence of grain coalescence. the density of tds was reduced to 5×108 cm-2 after annealing at 1650oc roughly. in conclusion from this present research, it has been confirmed that pre deposition and post deposition annealing has been an effective treatment to control the microstructure and reduce dislocation density for advancement in the high quality fabrication of semiconductor devices.

English

kejuruteraan

Last Update: 2016-07-24
Usage Frequency: 1
Quality:

Reference: Anonymous
Warning: Contains invisible HTML formatting

Get a better translation with
8,784,574,222 human contributions

Users are now asking for help:



We use cookies to enhance your experience. By continuing to visit this site you agree to our use of cookies. Learn more. OK